SQM200N04-1M7L_GE3

SQM200N04-1M7L_GE3

SQM200N04-1M7L_GE3

Hersteller: Vishay
Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) TO-263
sqm200n04-1m7l.pdf
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Technische Details SQM200N04-1M7L_GE3

Description: MOSFET N-CH 40V 200A TO-263, Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Packaging: Tape & Reel (TR).

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SQM200N04-1m7L_GE3
SQM200N04-1m7L_GE3
Hersteller: Vishay / Siliconix
MOSFET 40V 200A 375 AEC-Q101 Qualified
sqm200n04_1m7l-1764877.pdf
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SQM200N04-1M7L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO-263
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
sqm200n04-1m7l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM200N04-1M7L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO-263
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
sqm200n04-1m7l.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen