SQM200N04-1m7L_GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 6.49 EUR |
| 10+ | 4.35 EUR |
| 100+ | 3.33 EUR |
| 500+ | 2.99 EUR |
| 800+ | 2.53 EUR |
| 2400+ | 2.43 EUR |
| 4800+ | 2.39 EUR |
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Technische Details SQM200N04-1m7L_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 200A TO263-7, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab).
Weitere Produktangebote SQM200N04-1m7L_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SQM200N04-1m7L_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 200A TO263-7Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SQM200N04-1m7L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQM200N04-1m7L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SQM200N04-1m7L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 200A TO263-7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH