SQM200N04-1m7L_GE3 Vishay / Siliconix
auf Bestellung 3193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.49 EUR |
| 10+ | 4.35 EUR |
| 100+ | 3.33 EUR |
| 500+ | 2.99 EUR |
| 800+ | 2.53 EUR |
| 2400+ | 2.43 EUR |
| 4800+ | 2.39 EUR |
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Technische Details SQM200N04-1m7L_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 200A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQM200N04-1m7L_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SQM200N04-1M7L_GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) TO-263 |
Produkt ist nicht verfügbar |
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SQM200N04-1m7L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQM200N04-1m7L_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11168 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |