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SQS401EN-T1_BE3

SQS401EN-T1_BE3 Vishay Siliconix

sqs401en.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 105000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.9 EUR
6000+ 0.85 EUR
9000+ 0.81 EUR
Mindestbestellmenge: 3000
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Technische Details SQS401EN-T1_BE3 Vishay Siliconix

Description: MOSFET P-CH 40V 16A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQS401EN-T1_BE3 nach Preis ab 0.86 EUR bis 2.18 EUR

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SQS401EN-T1_BE3 SQS401EN-T1_BE3 Hersteller : Vishay Siliconix sqs401en.pdf Description: MOSFET P-CH 40V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 108247 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
15+ 1.77 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 0.95 EUR
Mindestbestellmenge: 13
SQS401EN-T1_BE3 SQS401EN-T1_BE3 Hersteller : Vishay / Siliconix sqs401en.pdf MOSFET P-CHANNEL 40V (D-S)
auf Bestellung 987823 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.18 EUR
30+ 1.74 EUR
100+ 1.37 EUR
500+ 1.18 EUR
1000+ 0.96 EUR
3000+ 0.9 EUR
6000+ 0.86 EUR
Mindestbestellmenge: 24
SQS401EN-T1"BE3 SQS401EN-T1"BE3 Hersteller : VISHAY VISH-S-A0001185100-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: VISHAY - SQS401EN-T1"BE3 - MOSFET, P-CH, 40V, 16A, POWERPAK 1212
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 62.5W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.02ohm
directShipCharge: 25
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 6798 Stücke:
Lieferzeit 14-21 Tag (e)