SQS401EN-T1_BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.75 EUR |
| 6000+ | 0.71 EUR |
| 9000+ | 0.68 EUR |
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Technische Details SQS401EN-T1_BE3 Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQS401EN-T1_BE3 nach Preis ab 0.63 EUR bis 2.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SQS401EN-T1_BE3 | Vishay / Siliconix |
MOSFETs P-CHANNEL 40V (D-S) |
auf Bestellung 862942 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS401EN-T1_BE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 16A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 61314 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS401EN-T1"BE3 | VISHAY |
Description: VISHAY - SQS401EN-T1"BE3 - MOSFET, P-CH, 40V, 16A, POWERPAK 1212 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 62.5W Bauform - Transistor: PowerPAK 1212 Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm directShipCharge: 25 |
auf Bestellung 1997 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQS401EN-T1_BE3 |
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Hersteller: Vishay / Siliconix
MOSFETs P-CHANNEL 40V (D-S)
MOSFETs P-CHANNEL 40V (D-S)
auf Bestellung 862942 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.62 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.71 EUR |
| 3000+ | 0.64 EUR |
| 6000+ | 0.63 EUR |
| SQS401EN-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 61314 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.9 EUR |
| 14+ | 1.51 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.83 EUR |
| SQS401EN-T1"BE3 |
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Hersteller: VISHAY
Description: VISHAY - SQS401EN-T1"BE3 - MOSFET, P-CH, 40V, 16A, POWERPAK 1212
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 62.5W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.02ohm
directShipCharge: 25
Description: VISHAY - SQS401EN-T1"BE3 - MOSFET, P-CH, 40V, 16A, POWERPAK 1212
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 62.5W
Bauform - Transistor: PowerPAK 1212
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.02ohm
directShipCharge: 25
auf Bestellung 1997 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 113+ | 2.23 EUR |
| 141+ | 1.64 EUR |
| 152+ | 1.42 EUR |
| 164+ | 1.31 EUR |
| 179+ | 1.2 EUR |
| 250+ | 1.12 EUR |
| 500+ | 1.04 EUR |