auf Bestellung 35261 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 0.98 EUR |
| 55+ | 0.95 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6L35FU(TE85L,F) Toshiba
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V, Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote SSM6L35FU(TE85L,F) nach Preis ab 0.26 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6L35FU(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 20V 0.18A/0.1A US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
|
|
SSM6L35FU(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 2900 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
 |
SSM6L35FU(TE85L,F) | Hersteller : Toshiba |
Trans MOSFET N/P-CH Si 20V 0.18A/0.1A 6-Pin US T/R |
Produkt ist nicht verfügbar |