| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.79 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.18 EUR |
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Technische Details SSM6L35FU(TE85L,F) Toshiba
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6, Part Status: Active, Supplier Device Package: US6, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.2V Drive, Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 200mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6L35FU(TE85L,F) nach Preis ab 0.21 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SSM6L35FU(TE85L,F) | Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 20V 0.18A/0.1A US6Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.2V Drive Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Drain to Source Voltage (Vdss): 20V Power - Max: 200mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L35FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6 Part Status: Active Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.2V Drive Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Drain to Source Voltage (Vdss): 20V Power - Max: 200mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2900 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SSM6L35FU(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.21 EUR |
| SSM6L35FU(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)