| Anzahl | Preis |
|---|---|
| 5+ | 0.66 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6L35FU(TE85L,F) Toshiba
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6, Part Status: Active, Supplier Device Package: US6, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.2V Drive, Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 200mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6L35FU(TE85L,F) nach Preis ab 0.18 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6L35FU(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 20V 0.18A/0.1A US6Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.2V Drive Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Drain to Source Voltage (Vdss): 20V Power - Max: 200mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SSM6L35FU(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6 Part Status: Active Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.2V Drive Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Drain to Source Voltage (Vdss): 20V Power - Max: 200mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |