SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.21 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
25 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V, Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: US6, Part Status: Active.
Weitere Produktangebote SSM6L35FU(TE85L,F) nach Preis ab 0.17 EUR bis 0.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SSM6L35FU(TE85L,F) | Toshiba |
MOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 |
auf Bestellung 2913 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6L35FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2900 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SSM6L35FU(TE85L,F) |
|
Hersteller: Toshiba
MOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1
MOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1
auf Bestellung 2913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
| SSM6L35FU(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)