SUD40151EL-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 40V 42A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 17.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
auf Bestellung 2329 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.37 EUR |
| 10+ | 3.62 EUR |
| 100+ | 2.88 EUR |
| 500+ | 2.44 EUR |
| 1000+ | 2.07 EUR |
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Technische Details SUD40151EL-GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 42A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 17.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V.
Weitere Produktangebote SUD40151EL-GE3 nach Preis ab 2.05 EUR bis 4.39 EUR
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SUD40151EL-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 40V Vds 20V Vgs TO-252 |
auf Bestellung 67017 Stücke: Lieferzeit 14-28 Tag (e) |
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SUD40151EL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 42A 3-Pin(2+Tab) TO-252AA |
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SUD40151EL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 42A 3-Pin(2+Tab) TO-252AA |
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| SUD40151EL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 42A 3-Pin(2+Tab) TO-252AA |
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| SUD40151EL-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -42A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -42A Pulsed drain current: -100A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
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SUD40151EL-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 42A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 17.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SUD40151EL-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -42A; Idm: -100A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -42A Pulsed drain current: -100A Power dissipation: 50W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: SMD Gate charge: 112nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |