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SUD50P04-08-GE3

SUD50P04-08-GE3 Vishay Siliconix

sud50p04-08.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.43 EUR
Mindestbestellmenge: 2000
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Technische Details SUD50P04-08-GE3 Vishay Siliconix

Description: MOSFET P-CH 40V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V, Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V.

Weitere Produktangebote SUD50P04-08-GE3 nach Preis ab 0.94 EUR bis 3.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SUD50P04-08-GE3 SUD50P04-08-GE3 Hersteller : VISHAY sud50p04-08.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -100A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -100A
Power dissipation: 73.5W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 159nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2520 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.46 EUR
55+ 1.3 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 50
SUD50P04-08-GE3 SUD50P04-08-GE3 Hersteller : VISHAY sud50p04-08.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; Idm: -100A; 73.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Pulsed drain current: -100A
Power dissipation: 73.5W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 159nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
50+1.46 EUR
55+ 1.3 EUR
72+ 1 EUR
76+ 0.94 EUR
Mindestbestellmenge: 50
SUD50P04-08-GE3 SUD50P04-08-GE3 Hersteller : Vishay Siliconix sud50p04-08.pdf Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
auf Bestellung 6189 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.46 EUR
10+ 2.83 EUR
100+ 2.2 EUR
500+ 1.86 EUR
1000+ 1.52 EUR
Mindestbestellmenge: 8
SUD50P04-08-GE3 SUD50P04-08-GE3 Hersteller : Vishay Semiconductors sud50p04-08.pdf MOSFET 40V 50A P-CH MOSFET
auf Bestellung 27864 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.48 EUR
19+ 2.86 EUR
100+ 2.22 EUR
500+ 1.88 EUR
1000+ 1.53 EUR
2000+ 1.44 EUR
4000+ 1.37 EUR
Mindestbestellmenge: 15
SUD50P04-08-GE3 SUD50P04-08-GE3 Hersteller : VISHAY VISH-S-A0009497827-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: VISHAY - SUD50P04-08-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 50 A, 0.0067 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 73.5W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0067ohm
auf Bestellung 66789 Stücke:
Lieferzeit 14-21 Tag (e)
SUD50P04-08-GE3 SUD50P04-08-GE3 Hersteller : Vishay sud50p04-08.pdf Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
SUD50P04-08-GE3 SUD50P04-08-GE3 Hersteller : Vishay sud50p04-08.pdf Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
SUD50P04-08-GE3 SUD50P04-08-GE3 Hersteller : Vishay sud50p04-08.pdf Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar