auf Bestellung 495 Stücke:
Lieferzeit 650-664 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 14.48 EUR |
| 10+ | 13.03 EUR |
| 100+ | 10.69 EUR |
| 500+ | 9.1 EUR |
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Technische Details SUM60061EL-GE3 Vishay / Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D²Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V.
Weitere Produktangebote SUM60061EL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| SUM60061EL-GE3 | Hersteller : VISHAY |
 SUM60061EL-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |
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SUM60061EL-GE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V |
Produkt ist nicht verfügbar |