SUM60061EL-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
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Technische Details SUM60061EL-GE3 Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V.
Weitere Produktangebote SUM60061EL-GE3 nach Preis ab 5.9 EUR bis 16.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SUM60061EL-GE3 | Vishay |
Trans MOSFET P-CH 80V 150A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM60061EL-GE3 | Vishay |
Trans MOSFET P-CH 80V 150A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM60061EL-GE3 | VISHAY |
Description: VISHAY - SUM60061EL-GE3 - MOSFET, P-CH, 80V, 150A, TO-263 tariffCode: 0 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 375W SVHC: To Be Advised Bauform - Transistor: TO-263 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No usEccn: EAR99 Kanaltyp: P Channel Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0061ohm directShipCharge: 25 |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM60061EL-GE3 | Vishay Siliconix |
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V |
auf Bestellung 8494 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60061EL-GE3 | Vishay / Siliconix |
MOSFETs TO263 P-CH 80V 150A |
auf Bestellung 10949 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUM60061EL-GE3 |
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Hersteller: Vishay
Trans MOSFET P-CH 80V 150A 3-Pin(2+Tab) D2PAK
Trans MOSFET P-CH 80V 150A 3-Pin(2+Tab) D2PAK
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.41 EUR |
| 24+ | 7.32 EUR |
| 100+ | 6.01 EUR |
| SUM60061EL-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 80V 150A 3-Pin(2+Tab) D2PAK
Trans MOSFET P-CH 80V 150A 3-Pin(2+Tab) D2PAK
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.41 EUR |
| 24+ | 7.49 EUR |
| 100+ | 6.25 EUR |
| SUM60061EL-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SUM60061EL-GE3 - MOSFET, P-CH, 80V, 150A, TO-263
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 150A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 375W
SVHC: To Be Advised
Bauform - Transistor: TO-263
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0061ohm
directShipCharge: 25
Description: VISHAY - SUM60061EL-GE3 - MOSFET, P-CH, 80V, 150A, TO-263
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 150A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 375W
SVHC: To Be Advised
Bauform - Transistor: TO-263
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0061ohm
directShipCharge: 25
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 10.92 EUR |
| SUM60061EL-GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
Description: P-CHANNEL 80 V (D-S) MOSFET D2PA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
auf Bestellung 8494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.98 EUR |
| 10+ | 8.06 EUR |
| 100+ | 5.9 EUR |
| SUM60061EL-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO263 P-CH 80V 150A
MOSFETs TO263 P-CH 80V 150A
auf Bestellung 10949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.09 EUR |
| 10+ | 10.97 EUR |
| 100+ | 8.07 EUR |
| 500+ | 7.58 EUR |