SUM60N10-17-E3

SUM60N10-17-E3

Hersteller: Vishay
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
72070.pdf 72070.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 220 Stücke
Lieferzeit 14-21 Tag (e)
38+ 4.3 EUR
44+ 3.61 EUR
45+ 3.43 EUR
100+ 2.77 EUR

Technische Details SUM60N10-17-E3

Description: MOSFET N-CH 100V 60A TO263, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-263 (D²Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.75W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Preis SUM60N10-17-E3 ab 2.77 EUR bis 4.3 EUR

SUM60N10-17-E3
SUM60N10-17-E3
Hersteller: Vishay
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
72070.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM60N10-17-E3
Hersteller: Vishay
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
72070.pdf 72070.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM60N10-17-E3
SUM60N10-17-E3
Hersteller: Vishay Semiconductors
MOSFET 100V 60A 150W
72070-1765848.pdf
auf Bestellung 3200 Stücke
Lieferzeit 14-28 Tag (e)
SUM60N10-17-E3
SUM60N10-17-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
72070.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM60N10-17-E3
SUM60N10-17-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO263
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
72070.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM60N10-17-E3
SUM60N10-17-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A D2PAK
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
72070.pdf
auf Bestellung 5482 Stücke
Lieferzeit 21-28 Tag (e)