SUM60N10-17-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details SUM60N10-17-E3 Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO263, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.75W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote SUM60N10-17-E3 nach Preis ab 1.84 EUR bis 7.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SUM60N10-17-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 589 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM60N10-17-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 60A TO263 Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 2117 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60N10-17-E3 | Vishay |
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 589 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM60N10-17-E3 | Vishay Semiconductors |
MOSFETs 100V 60A 150W |
auf Bestellung 881 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60N10-17-E3 | Vishay |
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SUM60N10-17-E3 | Vishay |
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| SUM60N10-17-E3 | VISHAY |
Description: VISHAY - SUM60N10-17-E3 - MOSFET, N, TO-263 tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 |
auf Bestellung 492 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SUM60N10-17-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.99 EUR |
| 24+ | 3.07 EUR |
| 26+ | 2.79 EUR |
| 100+ | 2.35 EUR |
| 250+ | 2.04 EUR |
| 500+ | 1.84 EUR |
| SUM60N10-17-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 60A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 2117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.86 EUR |
| 10+ | 4.04 EUR |
| 100+ | 3.2 EUR |
| SUM60N10-17-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 589 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 6.1 EUR |
| 31+ | 4.72 EUR |
| 100+ | 3.49 EUR |
| 250+ | 3.29 EUR |
| 500+ | 2.74 EUR |
| SUM60N10-17-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 100V 60A 150W
MOSFETs 100V 60A 150W
auf Bestellung 881 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.83 EUR |
| 10+ | 4.75 EUR |
| 100+ | 3.84 EUR |
| 500+ | 3.12 EUR |
| 800+ | 2.87 EUR |
| SUM60N10-17-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| SUM60N10-17-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| SUM60N10-17-E3 |
|
Hersteller: VISHAY
Description: VISHAY - SUM60N10-17-E3 - MOSFET, N, TO-263
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
Description: VISHAY - SUM60N10-17-E3 - MOSFET, N, TO-263
tariffCode: 85412100
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)