SUM70101EL-GE3 Vishay Semiconductors
auf Bestellung 6803 Stücke:
Lieferzeit 322-336 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 9.85 EUR |
| 10+ | 8.27 EUR |
| 100+ | 6.71 EUR |
| 500+ | 6.14 EUR |
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Technische Details SUM70101EL-GE3 Vishay Semiconductors
Description: MOSFET P-CH 100V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V.
Weitere Produktangebote SUM70101EL-GE3 nach Preis ab 12.65 EUR bis 16.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SUM70101EL-GE3 | Hersteller : Vishay Siliconix |
 P-канальний ПТ; Udss, В = 100; Ciss, пФ @ Uds, В = 7000 @ 50; Qg, нКл = 190; Р, Вт = 375; Тексп, °C = -55...+175; TO-263 |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70101EL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 120A 3-Pin(2+Tab) D2PAK |
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SUM70101EL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 120A 3-Pin(2+Tab) D2PAK |
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| SUM70101EL-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
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SUM70101EL-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V |
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SUM70101EL-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SUM70101EL-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |