auf Bestellung 288 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.1 EUR |
| 10+ | 5.98 EUR |
| 25+ | 5.64 EUR |
| 100+ | 4.81 EUR |
| 250+ | 4.55 EUR |
| 500+ | 4.39 EUR |
| 1000+ | 4.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUP60030E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 80V 120A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V.
Weitere Produktangebote SUP60030E-GE3 nach Preis ab 5.33 EUR bis 7.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SUP60030E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 80V 120A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V |
auf Bestellung 344 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||
 |
SUP60030E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||
|
|
SUP60030E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||
 |
SUP60030E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||
| SUP60030E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 250A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
| SUP60030E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 250A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |