SUP60030E-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 349 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 349 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SUP60030E-GE3
Description: MOSFET N-CH 80V 120A TO220AB, Base Part Number: SUP60030, Package / Case: TO-220-3, Supplier Device Package: TO-220AB, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 375W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Drain to Source Voltage (Vdss): 80V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Bulk, Manufacturer: Vishay Siliconix.
Preis SUP60030E-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Semiconductors MOSFET 80V Vds 20V Vgs TO-220 
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auf Bestellung 959 Stücke Lieferzeit 14-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 80V 120A TO220AB Base Part Number: SUP60030 Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk Manufacturer: Vishay Siliconix
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auf Bestellung 1490 Stücke Lieferzeit 21-28 Tag (e) |
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