SUP60030E-GE3

SUP60030E-GE3

SUP60030E-GE3

Hersteller: Vishay / Siliconix
MOSFET 80V Vds 20V Vgs TO-220
sup60030e-843796.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 349 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SUP60030E-GE3

Description: MOSFET N-CH 80V 120A TO220AB, Base Part Number: SUP60030, Package / Case: TO-220-3, Supplier Device Package: TO-220AB, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 375W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Drain to Source Voltage (Vdss): 80V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Bulk, Manufacturer: Vishay Siliconix.

Preis SUP60030E-GE3 ab 0 EUR bis 0 EUR

SUP60030E-GE3
SUP60030E-GE3
Hersteller: Vishay Semiconductors
MOSFET 80V Vds 20V Vgs TO-220
VISH_S_A0001811376_1-2568015.pdf
auf Bestellung 959 Stücke
Lieferzeit 14-28 Tag (e)
SUP60030E-GE3
SUP60030E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 120A TO220AB
Base Part Number: SUP60030
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: Vishay Siliconix
sup60030e.pdf
auf Bestellung 1490 Stücke
Lieferzeit 21-28 Tag (e)