auf Bestellung 288 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 7.1 EUR |
10+ | 5.98 EUR |
25+ | 5.64 EUR |
100+ | 4.81 EUR |
250+ | 4.55 EUR |
500+ | 4.39 EUR |
1000+ | 4.06 EUR |
Produktrezensionen
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Technische Details SUP60030E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 80V 120A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V.
Weitere Produktangebote SUP60030E-GE3 nach Preis ab 5.33 EUR bis 7.23 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SUP60030E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 80V 120A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V |
auf Bestellung 344 Stücke: Lieferzeit 21-28 Tag (e) |
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SUP60030E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB |
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SUP60030E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP60030E-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP60030E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 250A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP60030E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 250A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |