SUP70101EL-GE3 Vishay Semiconductors
auf Bestellung 1783 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.05 EUR |
| 25+ | 5.59 EUR |
| 100+ | 4.78 EUR |
| 500+ | 4.26 EUR |
| 1000+ | 4.03 EUR |
| 2500+ | 3.72 EUR |
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Technische Details SUP70101EL-GE3 Vishay Semiconductors
Description: MOSFET P-CH 100V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V.
Weitere Produktangebote SUP70101EL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SUP70101EL-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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SUP70101EL-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SUP70101EL-GE3 | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP70101EL-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SUP70101EL-GE3 | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |