SUP70101EL-GE3 VISHAY
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Mounting: THT
Pulsed drain current: -240A
Power dissipation: 375W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 15mΩ
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.99 EUR |
| 22+ | 4.05 EUR |
| 25+ | 3.45 EUR |
| 28+ | 3.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUP70101EL-GE3 VISHAY
Description: MOSFET P-CH 100V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V.
Weitere Produktangebote SUP70101EL-GE3 nach Preis ab 2.95 EUR bis 8.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SUP70101EL-GE3 | Vishay |
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 313 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
SUP70101EL-GE3 | Vishay |
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
SUP70101EL-GE3 | Vishay |
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
SUP70101EL-GE3 | Vishay Semiconductors |
MOSFETs -100V Vds 20V Vgs TO-220AB |
auf Bestellung 26898 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
SUP70101EL-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 100V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SUP70101EL-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.3 EUR |
| 31+ | 5.65 EUR |
| SUP70101EL-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.85 EUR |
| 47+ | 3.55 EUR |
| 50+ | 3.38 EUR |
| 100+ | 2.99 EUR |
| SUP70101EL-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.85 EUR |
| 47+ | 3.63 EUR |
| 50+ | 3.51 EUR |
| 100+ | 3.15 EUR |
| SUP70101EL-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -100V Vds 20V Vgs TO-220AB
MOSFETs -100V Vds 20V Vgs TO-220AB
auf Bestellung 26898 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.72 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.53 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.95 EUR |
| SUP70101EL-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
Description: MOSFET P-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.6 EUR |
| 10+ | 5.68 EUR |
| 50+ | 4.41 EUR |
| 100+ | 4.01 EUR |
| 500+ | 3.3 EUR |