| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.37 EUR |
| 31+ | 5.71 EUR |
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Technische Details SUP70101EL-GE3 Vishay
Description: MOSFET P-CH 100V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V.
Weitere Produktangebote SUP70101EL-GE3 nach Preis ab 3.02 EUR bis 8.43 EUR
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SUP70101EL-GE3 | Vishay |
 Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP70101EL-GE3 | Vishay |
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP70101EL-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 100V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V |
auf Bestellung 3933 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP70101EL-GE3 | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 313 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SUP70101EL-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.94 EUR |
| 47+ | 3.67 EUR |
| 50+ | 3.56 EUR |
| 100+ | 3.19 EUR |
| SUP70101EL-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 6.94 EUR |
| 47+ | 3.59 EUR |
| 50+ | 3.43 EUR |
| 100+ | 3.02 EUR |
| SUP70101EL-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
Description: MOSFET P-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
auf Bestellung 3933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.43 EUR |
| 10+ | 5.56 EUR |
| 50+ | 4.32 EUR |
| 100+ | 3.93 EUR |
| 500+ | 3.24 EUR |
| SUP70101EL-GE3 |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)