SUP90140E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 200V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4132 pF @ 100 V
auf Bestellung 381 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.62 EUR |
| 10+ | 6.39 EUR |
| 100+ | 5.17 EUR |
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Technische Details SUP90140E-GE3 Vishay Siliconix
Description: MOSFET N-CH 200V 90A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4132 pF @ 100 V.
Weitere Produktangebote SUP90140E-GE3 nach Preis ab 4.91 EUR bis 7.9 EUR
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SUP90140E-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 200V Vds 20V Vgs TO-220 |
auf Bestellung 628 Stücke: Lieferzeit 14-28 Tag (e) |
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SUP90140E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB |
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SUP90140E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB |
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SUP90140E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| SUP90140E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO220AB Mounting: THT Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 96nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 18mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SUP90140E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO220AB Mounting: THT Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 96nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 18mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |