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TSM500P02DCQ RFG

TSM500P02DCQ RFG Taiwan Semiconductor Corporation

TSM500P02D_B15.pdf Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
auf Bestellung 78000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.14 EUR
6000+ 1.08 EUR
9000+ 1.03 EUR
Mindestbestellmenge: 3000
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Technische Details TSM500P02DCQ RFG Taiwan Semiconductor Corporation

Description: MOSFET 2P-CH 20V 4.7A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 620mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-TDFN (2x2), Part Status: Active.

Weitere Produktangebote TSM500P02DCQ RFG nach Preis ab 1.15 EUR bis 2.78 EUR

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TSM500P02DCQ RFG TSM500P02DCQ RFG Hersteller : Taiwan Semiconductor Corporation TSM500P02D_B15.pdf Description: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
auf Bestellung 80721 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.76 EUR
12+ 2.25 EUR
100+ 1.75 EUR
500+ 1.48 EUR
1000+ 1.21 EUR
Mindestbestellmenge: 10
TSM500P02DCQ RFG TSM500P02DCQ RFG Hersteller : Taiwan Semiconductor TSM500P02D_B15.pdf MOSFET -20V, -4.7A, Dual P-Channel Power MOSFET
auf Bestellung 10250 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.78 EUR
21+ 2.5 EUR
100+ 1.94 EUR
500+ 1.61 EUR
1000+ 1.27 EUR
3000+ 1.18 EUR
6000+ 1.15 EUR
Mindestbestellmenge: 19
TSM500P02DCQ RFG TSM500P02DCQ RFG Hersteller : Taiwan Semiconductor tsm500p02d_b15.pdf Trans MOSFET P-CH 20V 4.7A 6-Pin TDFN EP T/R
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TSM500P02DCQ RFG TSM500P02DCQ RFG Hersteller : Taiwan Semiconductor tsm500p02d_b15.pdf Trans MOSFET P-CH 20V 4.7A 6-Pin TDFN EP T/R
Produkt ist nicht verfügbar