TSM500P02DCQ RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET 2P-CH 20V 4.7A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TSM500P02DCQ RFG Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 4.7A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 620mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-TDFN (2x2), Part Status: Active.
Weitere Produktangebote TSM500P02DCQ RFG nach Preis ab 0.28 EUR bis 1.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM500P02DCQ RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2P-CH 20V 4.7A 6TDFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 620mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-TDFN (2x2) Part Status: Active |
auf Bestellung 73288 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TSM500P02DCQ RFG | Hersteller : Taiwan Semiconductor |
MOSFETs -20V, -4.7A, Dual P-Channel Power MOSFET |
auf Bestellung 14230 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TSM500P02DCQ RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 4.7A 6-Pin TDFN EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
TSM500P02DCQ RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET P-CH 20V 4.7A 6-Pin TDFN EP T/R |
Produkt ist nicht verfügbar |