Produkte > TAIWAN SEMICONDUCTOR CORPORATION > TSM5NC50CZ C0G
TSM5NC50CZ C0G

TSM5NC50CZ C0G Taiwan Semiconductor Corporation

Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
auf Bestellung 671 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.35 EUR
10+ 2.75 EUR
100+ 2.14 EUR
500+ 1.81 EUR
Mindestbestellmenge: 8
Produktrezensionen
Produktbewertung abgeben

Technische Details TSM5NC50CZ C0G Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 500V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V.

Weitere Produktangebote TSM5NC50CZ C0G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM5NC50CZ C0G TSM5NC50CZ C0G Hersteller : Taiwan Semiconductor TSM5NC50CZ_A1705-1143359.pdf MOSFET MOSFET, Single, N-Ch Planar, 500V, 5A
Produkt ist nicht verfügbar