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TSM5NC50CZ C0G

TSM5NC50CZ C0G Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 500V 5A TO220
Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
10+1.86 EUR
100+1.45 EUR
500+1.23 EUR
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Technische Details TSM5NC50CZ C0G Taiwan Semiconductor Corporation

Description: MOSFET N-CHANNEL 500V 5A TO220, Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 1.38Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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TSM5NC50CZ C0G TSM5NC50CZ C0G Hersteller : Taiwan Semiconductor TSM5NC50CZ_A1705-1143359.pdf MOSFET MOSFET, Single, N-Ch Planar, 500V, 5A
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