VS-65EPS12LHM3 Vishay Semiconductors
auf Bestellung 1075 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 7.87 EUR |
| 10+ | 6.42 EUR |
| 100+ | 5.4 EUR |
| 250+ | 5.05 EUR |
| 500+ | 5.02 EUR |
| 1000+ | 4.54 EUR |
| 2500+ | 4.42 EUR |
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Technische Details VS-65EPS12LHM3 Vishay Semiconductors
Description: DIODE GEN PURP 1.2KV 65A TO247AD, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 65A, Supplier Device Package: TO-247AD, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 65 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote VS-65EPS12LHM3 nach Preis ab 3.94 EUR bis 8.1 EUR
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VS-65EPS12LHM3 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.2KV 65A TO247ADPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 65A Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 65 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2161 Stücke: Lieferzeit 10-14 Tag (e) |
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