VS-8EWS12STR-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A D-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.65 EUR |
10+ | 3.86 EUR |
100+ | 3.08 EUR |
500+ | 2.6 EUR |
1000+ | 2.21 EUR |
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Technische Details VS-8EWS12STR-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A D-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote VS-8EWS12STR-M3 nach Preis ab 2.25 EUR bis 4.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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VS-8EWS12STR-M3 | Hersteller : Vishay Semiconductors | Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3 |
auf Bestellung 1910 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWS12STR-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A D-PAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWS12STR-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VS-8EWS12STR-M3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying Type of diode: rectifying |
Produkt ist nicht verfügbar |