VS-8EWS12STR-M3 Vishay Semiconductors
auf Bestellung 1864 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.84 EUR |
| 10+ | 3.66 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 2.29 EUR |
| 2000+ | 1.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-8EWS12STR-M3 Vishay Semiconductors
Description: DIODE STANDARD 1200V 8A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote VS-8EWS12STR-M3 nach Preis ab 2.06 EUR bis 5.1 EUR
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VS-8EWS12STR-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 8A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
auf Bestellung 1303 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWS12STR-M3 | Hersteller : Vishay |
Diode Switching Si 1.2KV 8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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VS-8EWS12STR-M3 | Hersteller : Vishay |
Diode Switching Si 1.2KV 8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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VS-8EWS12STR-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1200V 8A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
Produkt ist nicht verfügbar |
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| VS-8EWS12STR-M3 | Hersteller : VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: DPAK Max. forward voltage: 1.1V Kind of package: 13 inch reel Quantity in set/package: 2000pcs. |
Produkt ist nicht verfügbar |


