VS-FC270SA20 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 200V 287A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 287A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 200A, 10V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 100 V
Description: MOSFET N-CH 200V 287A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 287A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 200A, 10V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 100 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 41.13 EUR |
10+ | 36.56 EUR |
100+ | 31.97 EUR |
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Produktbewertung abgeben
Technische Details VS-FC270SA20 Vishay General Semiconductor - Diodes Division
Description: VISHAY - VS-FC270SA20 - MOSFET-Transistor, n-Kanal, 287A, 200V, 0.0033 Ohm, 10V, 3.16V, SOT-227, tariffCode: 85412900, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 287A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Verlustleistung Pd: 937W, Gate-Source-Schwellenspannung, max.: 3.16V, euEccn: NLR, Verlustleistung: 937W, Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0033ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0033ohm, SVHC: No SVHC (16-Jan-2020).
Weitere Produktangebote VS-FC270SA20 nach Preis ab 42.08 EUR bis 43.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
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VS-FC270SA20 | Hersteller : Vishay Semiconductors | Discrete Semiconductor Modules 200V, 3.3mOhm, 270A SOT-227 Pwr Mod |
auf Bestellung 813 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-FC270SA20 | Hersteller : VISHAY |
Description: VISHAY - VS-FC270SA20 - MOSFET-Transistor, n-Kanal, 287A, 200V, 0.0033 Ohm, 10V, 3.16V, SOT-227 tariffCode: 85412900 Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 287A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 937W Gate-Source-Schwellenspannung, max.: 3.16V euEccn: NLR Verlustleistung: 937W Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0033ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: No SVHC (16-Jan-2020) |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-FC270SA20 | Hersteller : Vishay | SOT-227 Power Module Single Switch - Power MOSFET, 270 A |
Produkt ist nicht verfügbar |
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VS-FC270SA20 | Hersteller : VISHAY |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 219A; SOT227B; screw; Idm: 680A Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 219A On-state resistance: 3.3mΩ Power dissipation: 937W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: ThunderFET Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 680A Case: SOT227B Anzahl je Verpackung: 160 Stücke |
Produkt ist nicht verfügbar |
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VS-FC270SA20 | Hersteller : VISHAY |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 219A; SOT227B; screw; Idm: 680A Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 219A On-state resistance: 3.3mΩ Power dissipation: 937W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: ThunderFET Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 680A Case: SOT227B |
Produkt ist nicht verfügbar |