YJ7N65CI YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details YJ7N65CI YANGJIE TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 25A; 48W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 7A, Pulsed drain current: 25A, Power dissipation: 48W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 1.4Ω, Mounting: THT, Gate charge: 60nC, Kind of package: tube, Kind of channel: enhancement.