YJD60N04A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Pulsed drain current: 200A
Power dissipation: 35W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6655 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 290+ | 0.25 EUR |
| 320+ | 0.23 EUR |
| 440+ | 0.16 EUR |
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Technische Details YJD60N04A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 42A, Pulsed drain current: 200A, Power dissipation: 35W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: SMD, Gate charge: 29nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote YJD60N04A nach Preis ab 0.16 EUR bis 0.48 EUR
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YJD60N04A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 42A; 35W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 42A Pulsed drain current: 200A Power dissipation: 35W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 6655 Stücke: Lieferzeit 14-21 Tag (e) |
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YJD60N04A | Hersteller : Yangjie Technology |
Description: TO-252 N 40V 60A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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