YJH03N10A Yangjie Technology
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| 10000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| 40000+ | 0.12 EUR |
| 100000+ | 0.11 EUR |
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Technische Details YJH03N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W, Type of transistor: N-MOSFET, Polarisation: unipolar, Case: SOT89, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 2.4A, On-state resistance: 0.12Ω, Power dissipation: 4W, Gate charge: 16nC, Technology: TRENCH POWER MV, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 12A.
Weitere Produktangebote YJH03N10A nach Preis ab 0.083 EUR bis 0.18 EUR
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YJH03N10A | Hersteller : YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT89 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 2.4A On-state resistance: 0.12Ω Power dissipation: 4W Gate charge: 16nC Technology: TRENCH POWER MV Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A |
auf Bestellung 9185 Stücke: Lieferzeit 14-21 Tag (e) |
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