YJH03N10A Yangjie Technology
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Part Status: Active
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.19 EUR |
| 5000+ | 0.18 EUR |
| 10000+ | 0.17 EUR |
| 20000+ | 0.15 EUR |
| 40000+ | 0.14 EUR |
| 100000+ | 0.13 EUR |
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Technische Details YJH03N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W, Type of transistor: N-MOSFET, Polarisation: unipolar, Case: SOT89, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 12A, Power dissipation: 4W, Gate charge: 16nC, Technology: TRENCH POWER MV, Drain current: 2.4A, Kind of channel: enhancement, Drain-source voltage: 100V, Gate-source voltage: ±20V, On-state resistance: 0.12Ω.
Weitere Produktangebote YJH03N10A nach Preis ab 0.12 EUR bis 0.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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YJH03N10A | YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT89 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 12A Power dissipation: 4W Gate charge: 16nC Technology: TRENCH POWER MV Drain current: 2.4A Kind of channel: enhancement Drain-source voltage: 100V Gate-source voltage: ±20V On-state resistance: 0.12Ω |
auf Bestellung 6860 Stücke: Lieferzeit 14-21 Tag (e) |
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| YJH03N10A |
|
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 4W
Gate charge: 16nC
Technology: TRENCH POWER MV
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 12A
Power dissipation: 4W
Gate charge: 16nC
Technology: TRENCH POWER MV
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
auf Bestellung 6860 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 400+ | 0.21 EUR |
| 565+ | 0.15 EUR |
| 625+ | 0.13 EUR |
| 3000+ | 0.12 EUR |