YJH03N10A Yangjie Technology
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
| Anzahl | Preis |
|---|---|
| 1000+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| 10000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| 40000+ | 0.12 EUR |
| 100000+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YJH03N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2.4A, Pulsed drain current: 12A, Power dissipation: 4W, Case: SOT89, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 16nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJH03N10A nach Preis ab 0.099 EUR bis 0.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
YJH03N10A | Hersteller : YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 2.4A; 4W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 12A Power dissipation: 4W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 6880 Stücke: Lieferzeit 14-21 Tag (e) |
|