YJL2301F Yangzhou Yangjie Electronic Technology Co.,Ltd
Hersteller: Yangzhou Yangjie Electronic Technology Co.,LtdDescription: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
auf Bestellung 275 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 0.52 EUR |
| 56+ | 0.47 EUR |
| 103+ | 0.25 EUR |
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Technische Details YJL2301F Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 2A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V.
Weitere Produktangebote YJL2301F nach Preis ab 0.028 EUR bis 0.028 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| YJL2301F | Hersteller : Yangjie Electronic Technology |
P-Channel Enhancement Mode Field Effect Transistor |
auf Bestellung 999000 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL2301F | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -8A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke |
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YJL2301F | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 2A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V |
Produkt ist nicht verfügbar |
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YJL2301F | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -8A Power dissipation: 0.7W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |