Produkte > YANGJIE TECHNOLOGY > YJL2301F
YJL2301F

YJL2301F YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC19CFF1800F8BF&compId=YJL2301F.pdf?ci_sign=238e9a03127ca25e9e4923df7c0acef4bc139b24 Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -1.6A; 0.7W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Pulsed drain current: -8A
Power dissipation: 0.7W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1140+0.064 EUR
2060+0.035 EUR
2340+0.031 EUR
2640+0.027 EUR
2800+0.026 EUR
Mindestbestellmenge: 1140
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Technische Details YJL2301F YANGJIE TECHNOLOGY

Description: P-CH MOSFET 20V 2A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V.

Weitere Produktangebote YJL2301F nach Preis ab 0.026 EUR bis 0.35 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
YJL2301F YJL2301F Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301F.pdf Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
56+0.32 EUR
103+0.17 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
YJL2301F Hersteller : Yangjie Electronic Technology YJL2301F.pdf P-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 999000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.026 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
YJL2301F YJL2301F Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd YJL2301F.pdf Description: P-CH MOSFET 20V 2A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 327 pF @ 10 V
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