
YJL2305A YANGJIE TECHNOLOGY

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Technology: TRENCH POWER LV
Pulsed drain current: -23A
Drain-source voltage: -15V
Drain current: -4.5A
Gate charge: 7.2nC
On-state resistance: 62mΩ
Power dissipation: 1.2W
Gate-source voltage: ±10V
Kind of package: reel; tape
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
1370+ | 0.052 EUR |
1810+ | 0.04 EUR |
2040+ | 0.035 EUR |
2330+ | 0.031 EUR |
2470+ | 0.029 EUR |
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Technische Details YJL2305A YANGJIE TECHNOLOGY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W, Polarisation: unipolar, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Case: SOT23, Technology: TRENCH POWER LV, Pulsed drain current: -23A, Drain-source voltage: -15V, Drain current: -4.5A, Gate charge: 7.2nC, On-state resistance: 62mΩ, Power dissipation: 1.2W, Gate-source voltage: ±10V, Kind of package: reel; tape.