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YJL2305A

YJL2305A YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC1BA20DCF158BF&compId=YJL2305A.pdf?ci_sign=97db82c6e1d3565fc4171d27f8ab5d5e43cda9df Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W
Drain-source voltage: -15V
Drain current: -4.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.2nC
Technology: TRENCH POWER LV
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -23A
Mounting: SMD
Case: SOT23
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Technische Details YJL2305A YANGJIE TECHNOLOGY

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -15V; -4.5A; 1.2W, Drain-source voltage: -15V, Drain current: -4.5A, On-state resistance: 62mΩ, Type of transistor: P-MOSFET, Power dissipation: 1.2W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 7.2nC, Technology: TRENCH POWER LV, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: -23A, Mounting: SMD, Case: SOT23.