YJL2305B Yangzhou Yangjie Electronic Technology Co.,Ltd
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 48+ | 0.37 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.1 EUR |
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Technische Details YJL2305B Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: P-CH MOSFET 20V 5.4A SOT-23-3L, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta).
Weitere Produktangebote YJL2305B
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YJL2305B | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: P-CH MOSFET 20V 5.4A SOT-23-3L FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) |
Produkt ist nicht verfügbar |
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YJL2305B | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.4A Pulsed drain current: -22A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 75mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |