YJL2305B

YJL2305B YANGJIE TECHNOLOGY


YJL2305B.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details YJL2305B YANGJIE TECHNOLOGY

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -4.4A, Pulsed drain current: -22A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 7.2nC, Kind of package: reel; tape, Kind of channel: enhancement.