YJL2312A Yangjie Technology
Hersteller: Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.091 EUR |
| 15000+ | 0.086 EUR |
| 30000+ | 0.081 EUR |
| 60000+ | 0.075 EUR |
| 120000+ | 0.068 EUR |
| 300000+ | 0.065 EUR |
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Technische Details YJL2312A Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V.
Weitere Produktangebote YJL2312A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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YJL2312A | Hersteller : YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 4.6nC Technology: TRENCH POWER LV Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 27A Case: SOT23 Drain-source voltage: 20V Drain current: 5.4A On-state resistance: 39mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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YJL2312A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Gate charge: 4.6nC Technology: TRENCH POWER LV Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 27A Case: SOT23 Drain-source voltage: 20V Drain current: 5.4A On-state resistance: 39mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |