YJM04N10A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10845 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 550+ | 0.13 EUR |
| 585+ | 0.12 EUR |
| 740+ | 0.097 EUR |
| 785+ | 0.092 EUR |
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Technische Details YJM04N10A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.2A, Pulsed drain current: 16A, Power dissipation: 2.5W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 16nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote YJM04N10A nach Preis ab 0.092 EUR bis 0.25 EUR
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YJM04N10A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.2A Pulsed drain current: 16A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 10845 Stücke: Lieferzeit 14-21 Tag (e) |
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YJM04N10A | Hersteller : Yangjie Technology | Description: SOT-223 N 100V 4A Transistors F |
auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
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