YJM04N10A Yangjie Technology
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YJM04N10A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.2A, Power dissipation: 2.5W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Technology: TRENCH POWER MV, Gate charge: 16nC, Pulsed drain current: 16A.
Weitere Produktangebote YJM04N10A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
YJM04N10A | Hersteller : YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.2A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: TRENCH POWER MV Gate charge: 16nC Pulsed drain current: 16A |
Produkt ist nicht verfügbar |