.jpg "YJQ35N04A")
YJQ35N04A Yangjie Technology
auf Bestellung 500000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.31 EUR |
| 25000+ | 0.3 EUR |
| 50000+ | 0.28 EUR |
| 100000+ | 0.26 EUR |
| 200000+ | 0.23 EUR |
| 500000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YJQ35N04A Yangjie Technology
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 23A, Pulsed drain current: 120A, Power dissipation: 40W, Case: DFN3.3x3.3, Gate-source voltage: ±20V, On-state resistance: 10mΩ, Mounting: SMD, Gate charge: 29nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote YJQ35N04A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
YJQ35N04A | Hersteller : YANGJIE TECHNOLOGY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 120A Power dissipation: 40W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |