YJQ35N04A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2660 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| 340+ | 0.21 EUR |
| 425+ | 0.17 EUR |
| 450+ | 0.16 EUR |
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Technische Details YJQ35N04A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 23A, Pulsed drain current: 120A, Power dissipation: 40W, Case: DFN3.3x3.3, Gate-source voltage: ±20V, On-state resistance: 10mΩ, Mounting: SMD, Gate charge: 29nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote YJQ35N04A nach Preis ab 0.16 EUR bis 0.46 EUR
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YJQ35N04A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 120A Power dissipation: 40W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2660 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ35N04A | Hersteller : Yangjie Technology | Description: DFN(3.3x3.3) N 40V 35A Transist |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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