YJQ35N04A

YJQ35N04A YANGJIE TECHNOLOGY


YJQ35N04A.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details YJQ35N04A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 23A, Pulsed drain current: 120A, Power dissipation: 40W, Case: DFN3.3x3.3, Gate-source voltage: ±20V, On-state resistance: 10mΩ, Mounting: SMD, Gate charge: 29nC, Kind of package: reel; tape, Kind of channel: enhancement.