A1P35S12M3 STMicroelectronics
Hersteller: STMicroelectronics
IGBT Modules ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, so
| Anzahl | Privatkunde |
|---|---|
| 1+ | 71.46 EUR |
| 10+ | 69.41 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details A1P35S12M3 STMicroelectronics
Description: IGBT MODULE 1200V 35A ACEPACK 1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V.
Weitere Produktangebote A1P35S12M3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
A1P35S12M3 | STMicroelectronics |
Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 35A Case: ACEPACK™1 Application: Inverter; motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Mechanical mounting: screw Power dissipation: 250W |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| A1P35S12M3 |
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Hersteller: STMicroelectronics
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: ACEPACK™1
Application: Inverter; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Power dissipation: 250W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: ACEPACK™1
Application: Inverter; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Power dissipation: 250W
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)


