A1P35S12M3

A1P35S12M3 STMicroelectronics


a1p35s12m3.pdf Hersteller: STMicroelectronics
IGBT Modules ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, so
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10+66.99 EUR
108+61.04 EUR
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Technische Details A1P35S12M3 STMicroelectronics

Description: IGBT MOD 1200V 35A 250W ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V.

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A1P35S12M3 Hersteller : STMicroelectronics a1p35s12m3.pdf Trans IGBT Module N-CH 1200V 35A 250mW 15-Pin ACEPACK-1 Tray
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A1P35S12M3 A1P35S12M3 Hersteller : STMicroelectronics a1p35s12m3.pdf Trans IGBT Module N-CH 1200V 35A 250mW 15-Pin ACEPACK-1 Tray
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A1P35S12M3 A1P35S12M3 Hersteller : STMicroelectronics a1p35s12m3.pdf Description: IGBT MOD 1200V 35A 250W ACEPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V
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A1P35S12M3 Hersteller : STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41EDB85EEC9EC676360C7&compId=a1p35s12m3.pdf?ci_sign=9ebf6b7e1cc7b408043e8c89a36aebf21ee686d0 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A
Application: Inverter; motors
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Power dissipation: 250W
Max. off-state voltage: 1.2kV
Case: ACEPACK™1
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
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