 
A1P35S12M3 STMicroelectronics
 Hersteller: STMicroelectronics
                                                Hersteller: STMicroelectronicsIGBT Modules ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, so
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 1+ | 78.65 EUR | 
| 10+ | 66.99 EUR | 
| 108+ | 61.04 EUR | 
Produktrezensionen
Produktbewertung abgeben
Technische Details A1P35S12M3 STMicroelectronics
Description: IGBT MOD 1200V 35A 250W ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V. 
Weitere Produktangebote A1P35S12M3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
| A1P35S12M3 | Hersteller : STMicroelectronics |  Trans IGBT Module N-CH 1200V 35A 250mW 15-Pin ACEPACK-1 Tray | Produkt ist nicht verfügbar | ||
|   | A1P35S12M3 | Hersteller : STMicroelectronics |  Trans IGBT Module N-CH 1200V 35A 250mW 15-Pin ACEPACK-1 Tray | Produkt ist nicht verfügbar | |
|   | A1P35S12M3 | Hersteller : STMicroelectronics |  Description: IGBT MOD 1200V 35A 250W ACEPACK1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V | Produkt ist nicht verfügbar | |
| A1P35S12M3 | Hersteller : STMicroelectronics |  Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A Application: Inverter; motors Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 35A Pulsed collector current: 70A Power dissipation: 250W Max. off-state voltage: 1.2kV Case: ACEPACK™1 Electrical mounting: Press-in PCB Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor | Produkt ist nicht verfügbar |