A1P35S12M3 STMicroelectronics
Hersteller: STMicroelectronicsIGBT Modules ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, so
auf Bestellung 33 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 120.72 EUR |
| 10+ | 112.61 EUR |
| 18+ | 106.6 EUR |
| 108+ | 101.35 EUR |
| 504+ | 96.1 EUR |
| 1008+ | 93.18 EUR |
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Technische Details A1P35S12M3 STMicroelectronics
Description: IGBT MOD 1200V 35A 250W ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V.
Weitere Produktangebote A1P35S12M3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| A1P35S12M3 | Hersteller : STMicroelectronics |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A Electrical mounting: Press-in PCB Mechanical mounting: screw Case: ACEPACK™1 Power dissipation: 250W Pulsed collector current: 70A Application: Inverter; motors Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 35A Topology: IGBT half-bridge x3; NTC thermistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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A1P35S12M3 | Hersteller : STMicroelectronics |
Description: IGBT MOD 1200V 35A 250W ACEPACK1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V |
Produkt ist nicht verfügbar |
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| A1P35S12M3 | Hersteller : STMicroelectronics |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 35A Electrical mounting: Press-in PCB Mechanical mounting: screw Case: ACEPACK™1 Power dissipation: 250W Pulsed collector current: 70A Application: Inverter; motors Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 35A Topology: IGBT half-bridge x3; NTC thermistor |
Produkt ist nicht verfügbar |