A2T21H450W19SR6 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: RF MOSFET LDMOS 30V NI1230
Packaging: Bulk
Package / Case: NI-1230S-4S4S
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.11GHz ~ 2.2GHz
Power - Output: 89W
Gain: 15.7dB
Technology: LDMOS
Supplier Device Package: NI-1230S-4S4S
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 800 mA
Description: RF MOSFET LDMOS 30V NI1230
Packaging: Bulk
Package / Case: NI-1230S-4S4S
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.11GHz ~ 2.2GHz
Power - Output: 89W
Gain: 15.7dB
Technology: LDMOS
Supplier Device Package: NI-1230S-4S4S
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 800 mA
auf Bestellung 277 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 560.3 EUR |
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Technische Details A2T21H450W19SR6 NXP Semiconductors
Description: RF MOSFET LDMOS 30V NI1230, Packaging: Bulk, Package / Case: NI-1230S-4S4S, Current Rating (Amps): 10µA, Mounting Type: Chassis Mount, Frequency: 2.11GHz ~ 2.2GHz, Power - Output: 89W, Gain: 15.7dB, Technology: LDMOS, Supplier Device Package: NI-1230S-4S4S, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 30 V, Current - Test: 800 mA.
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