A2TBH45M65W3-FC STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Modules ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 140.92 EUR |
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Technische Details A2TBH45M65W3-FC STMicroelectronics
Description: ACEPACK 2 POWER MODULE, TRIPLE B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 5 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 650V, Current - Continuous Drain (Id) @ 25°C: 28A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 400V, Rds On (Max) @ Id, Vgs: 35mOhm @ 30A, 18V, Gate Charge (Qg) (Max) @ Vgs: 79nC @ 18V, Vgs(th) (Max) @ Id: 4.2V @ 10mA.
Weitere Produktangebote A2TBH45M65W3-FC nach Preis ab 95.01 EUR bis 120.45 EUR
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| A2TBH45M65W3-FC | Hersteller : STMicroelectronics |
Description: ACEPACK 2 POWER MODULE, TRIPLE B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 5 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 400V Rds On (Max) @ Id, Vgs: 35mOhm @ 30A, 18V Gate Charge (Qg) (Max) @ Vgs: 79nC @ 18V Vgs(th) (Max) @ Id: 4.2V @ 10mA |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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