A3G35H100-04SR3 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: RF MOSFET GAN 48V NI780
Packaging: Bulk
Package / Case: NI-780S-4L
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.6GHz
Configuration: 2 N-Channel
Power - Output: 14W
Technology: GaN
Supplier Device Package: NI-780S-4L
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 80 mA
Gain: 14dB @ 3.6GHz
Description: RF MOSFET GAN 48V NI780
Packaging: Bulk
Package / Case: NI-780S-4L
Mounting Type: Surface Mount
Frequency: 3.4GHz ~ 3.6GHz
Configuration: 2 N-Channel
Power - Output: 14W
Technology: GaN
Supplier Device Package: NI-780S-4L
Part Status: Active
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 80 mA
Gain: 14dB @ 3.6GHz
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 166.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details A3G35H100-04SR3 NXP Semiconductors
Description: RF MOSFET GAN 48V NI780, Packaging: Bulk, Package / Case: NI-780S-4L, Mounting Type: Surface Mount, Frequency: 3.4GHz ~ 3.6GHz, Configuration: 2 N-Channel, Power - Output: 14W, Technology: GaN, Supplier Device Package: NI-780S-4L, Part Status: Active, Voltage - Rated: 125 V, Voltage - Test: 48 V, Current - Test: 80 mA, Gain: 14dB @ 3.6GHz.
Weitere Produktangebote A3G35H100-04SR3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
A3G35H100-04SR3 | Hersteller : NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V |
Produkt ist nicht verfügbar |