A3G35H100-04SR3 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: RF MOSFET GAN 48V NI780
Current - Test: 80 mA
Voltage - Test: 48 V
Voltage - Rated: 125 V
Part Status: Active
Supplier Device Package: NI-780S-4L
Technology: GaN
Power - Output: 14W
Configuration: 2 N-Channel
Frequency: 3.4GHz ~ 3.6GHz
Mounting Type: Surface Mount
Package / Case: NI-780S-4L
Packaging: Bulk
Gain: 14dB @ 3.6GHz
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Technische Details A3G35H100-04SR3 NXP Semiconductors
Description: RF MOSFET GAN 48V NI780, Current - Test: 80 mA, Voltage - Test: 48 V, Voltage - Rated: 125 V, Part Status: Active, Supplier Device Package: NI-780S-4L, Technology: GaN, Power - Output: 14W, Configuration: 2 N-Channel, Frequency: 3.4GHz ~ 3.6GHz, Mounting Type: Surface Mount, Package / Case: NI-780S-4L, Packaging: Bulk, Gain: 14dB @ 3.6GHz.
Weitere Produktangebote A3G35H100-04SR3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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A3G35H100-04SR3 | Hersteller : NXP Semiconductors |
RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V |
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