A3I35D012WNR1 NXP Semiconductors
Hersteller: NXP SemiconductorsRF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 1.8 W Avg., 28 V
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details A3I35D012WNR1 NXP Semiconductors
Description: A3I35D012 - Airfast RF LDMOS Wid, Packaging: Bulk, Package / Case: TO-270-17 Variant, Flat Leads, Current Rating (Amps): 10µA, Mounting Type: Surface Mount, Frequency: 3.2GHz ~ 4GHz, Configuration: 2 N-Channel, Power - Output: 1.8W, Gain: 27.8dB, Technology: LDMOS (Dual), Supplier Device Package: TO-270WB-17, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 138 mA.
Weitere Produktangebote A3I35D012WNR1 nach Preis ab 58.08 EUR bis 58.08 EUR
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| A3I35D012WNR1 | Hersteller : NXP Semiconductors |
Description: A3I35D012 - Airfast RF LDMOS Wid Packaging: Bulk Package / Case: TO-270-17 Variant, Flat Leads Current Rating (Amps): 10µA Mounting Type: Surface Mount Frequency: 3.2GHz ~ 4GHz Configuration: 2 N-Channel Power - Output: 1.8W Gain: 27.8dB Technology: LDMOS (Dual) Supplier Device Package: TO-270WB-17 Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 138 mA |
auf Bestellung 396 Stücke: Lieferzeit 10-14 Tag (e) |
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