AC2M0025120D APSEMI
Hersteller: APSEMI
Description: SIC MOSFET N-CH 1200V 94A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A
Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 68.69 EUR |
| 10+ | 25.92 EUR |
| 60+ | 16.43 EUR |
| 240+ | 13.47 EUR |
| 450+ | 11.65 EUR |
| 900+ | 10.67 EUR |
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Technische Details AC2M0025120D APSEMI
Description: SIC MOSFET N-CH 1200V 94A TO247-, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 94A, Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V, Power Dissipation (Max): 380W (Tc), Vgs(th) (Max) @ Id: 4V @ 15mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V.