
AC2M0045170K APSEMI

Description: SIC MOSFET N-CH 1700V 74A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V
Power Dissipation (Max): 528W
Vgs(th) (Max) @ Id: 4V @ 18mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 58.78 EUR |
11+ | 54.85 EUR |
51+ | 48.98 EUR |
101+ | 35.26 EUR |
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Technische Details AC2M0045170K APSEMI
Description: SIC MOSFET N-CH 1700V 74A TO247-, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 50A, 20V, Power Dissipation (Max): 528W, Vgs(th) (Max) @ Id: 4V @ 18mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1700 V.