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AC3M0025065D

AC3M0025065D APSEMI

ABUIABA9GAAgndWRvAYo9uOM3AM.pdf Hersteller: APSEMI
Description: SIC MOSFET N-CH 650V 98A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A
Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V
Power Dissipation (Max): 330W
Vgs(th) (Max) @ Id: 3.6V @ 9.22mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
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Lieferzeit 10-14 Tag (e)
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11+18.84 EUR
51+16.82 EUR
101+12.11 EUR
501+9.96 EUR
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Technische Details AC3M0025065D APSEMI

Description: SIC MOSFET N-CH 650V 98A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A, Rds On (Max) @ Id, Vgs: 34mOhm @ 33.5A, 15V, Power Dissipation (Max): 330W, Vgs(th) (Max) @ Id: 3.6V @ 9.22mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V.