Produkte > APSEMI > AC3M0032120K
AC3M0032120K

AC3M0032120K APSEMI

ABUIABA9GAAgntWRvAYo8YnDzQQ.pdf Hersteller: APSEMI
Description: SIC MOSFET N-CH 1200V 64A TO247-
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.12 EUR
11+14.11 EUR
51+12.59 EUR
101+9.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AC3M0032120K APSEMI

Description: SIC MOSFET N-CH 1200V 64A TO247-, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A, Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 15V, Power Dissipation (Max): 288W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 11.5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V.