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AC3M0350120D

AC3M0350120D APSEMI

ABUIABA9GAAgn9WRvAYo-Nac5wM.pdf Hersteller: APSEMI
Description: SIC MOSFET N-CH 1200V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.6A, 15V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
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11+5.09 EUR
51+4.55 EUR
101+3.27 EUR
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Technische Details AC3M0350120D APSEMI

Description: SIC MOSFET N-CH 1200V 8A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 460mOhm @ 3.6A, 15V, Power Dissipation (Max): 52W, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V.